Part number:
BFP193WE6327XT
RF BJT Transistors
Infineon
BFP193WE6327XT
-
RoHS
YES
TYPE | DESCRIPTION |
Material | Si |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Automotive | Yes |
PPAP | Unknown |
Number of Elements per Chip | 1 |
Maximum Collector Base Voltage (V) | 20 |
Maximum Collector-Emitter Voltage (V) | 12 |
Maximum Collector-Emitter Voltage Range (V) | &l;20 |
Maximum Emitter Base Voltage (V) | 2 |
Maximum DC Collector Current (A) | 0.08 |
Maximum DC Collector Current Range (A) | 0.06 to 0.12 |
Minimum DC Current Gain | 70@30mA@8V |
Minimum DC Current Gain Range | 50 to 120 |
Maximum Power Dissipation (mW) | 580 |
Maximum Transition Frequency (MHz) | 8000(Typ) |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Supplier Temperature Grade | Automotive |
Mounting | Surface Mount |
Package Height | 0.9(Max) |
Package Width | 1.25 |
Package Length | 2 |
PCB changed | 3 |
Tab | Tab |
Standard Package Name | SOT |
Supplier Package | SOT-343 |
Lead Shape | Gull-wing |
Packaging | Tape and Reel |
Part Status | Obsolete |
Type | NPN |
Pin Count | 4 |
Configuration | Single Dual Emitter |