Part number:
IPB180N10S402ATMA1
RF Transistors
Infineon
Trans MOSFET N-
TO-263-7, D²Pak (6 Leads + Tab)
RoHS
YES
TYPE | DESCRIPTION |
Manufacturer Part Number: | IPB180N10S402ATMA1 |
Rohs Code: | Yes |
Part Life Cycle Code: | Active |
Ihs Manufacturer: | INFINEON TECHNOLOGIES AG |
Package Description: | SMALL OUTLINE, R-PSSO-G6 |
Reach Compliance Code: | not_compliant |
ECCN Code: | EAR99 |
Factory Lead Time: | 14 Weeks |
Manufacturer: | Infineon Technologies AG |
Risk Rank: | 1.64 |
Samacsys Description: | MOSFET N-Ch 100V 180A OptiMOS-T2 TO263-7 |
Avalanche Energy Rating (Eas): | 1110 mJ |
Case Connection: | DRAIN |
Configuration: | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min: | 100 V |
Drain Current-Max (ID): | 180 A |
Drain-source On Resistance-Max: | 0.0025 Ω |
FET Technology: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code: | TO-263 |
JESD-30 Code: | R-PSSO-G6 |
JESD-609 Code: | e3 |
Moisture Sensitivity Level: | 1 |
Number of Elements: | 1 |
Number of Terminals: | 6 |
Operating Mode: | ENHANCEMENT MODE |
Package Body Material: | PLASTIC/EPOXY |
Package Shape: | RECTANGULAR |
Package Style: | SMALL OUTLINE |
Peak Reflow Temperature (Cel): | NOT SPECIFIED |
Polarity/Channel Type: | N-CHANNEL |
Pulsed Drain Current-Max (IDM): | 720 A |
Reference Standard: | AEC-Q101 |
Surface Mount: | YES |
Terminal Finish: | Tin (Sn) |
Terminal Form: | GULL WING |
Terminal Position: | SINGLE |
[email protected] Reflow Temperature-Max (s): | NOT SPECIFIED |
Transistor Element Material: | SILICON |